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Fabrication Technologies of Quantum Dots
<Publications>
| 1 |
Y. Arakawa, M. Miyamura, K. Tachibana, K. Hoshino, S. Kako: Stranski-Krastanow growth and optical properties of self-assembled GaN quantum dots: Institute of Physics Conference Seriries Number 171, A R Long and J H Davies, Physics of Semicoductors 2002,61-68.
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| 2 |
Masatoshi KITAMURA, Tadahiro IMADA, and Yasuhiko ARAKAWA: Organic Transistor Circuits for Application to Organic Light-Emitting-Diode Displays: Jpn. J. Appl. Phys., 42, 4B, 2483-2487 (2003).
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| 3 |
Makoto Kudo, Tomoyoshi Mishima, Satoshi Iwamoto, Toshihiro Nakaoka, and Yasuhiko Arakawa: Long Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: to be published in Physica E: Low-dimensional Systems and Nanostructures.
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| 4 |
K. Hoshino and Y. Arakawa: Effect of thermal treatment on structure of GaN self-assembled quantum dots grown by MOCVD: Phys. Stat. Sol. (c), 0, No. 4, 1101-1104(2003).
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| 5 |
G.R.Bell, M.Pristovsek, S.Tsukamoto, B.G.Orr, Y.Arakawa, and N.Koguchi: In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth: Surface Science, vol.544, (2003) pp.234-240.
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| 6 |
K. Hoshino, S. Kako, and Y. Arakawa: Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescence: Phys. Stat. Sol. (b), 240, No. 2, 322-325(2003).
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| 7 |
M. Kitamura, T. Imada, and Y. Arakawa: Organic light-emitting diodes driven by pentacene-based thin-film transistors: Appl. Phys. Lett. 83, 3410-3412 (2003).
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| 8 |
H. Klausing, N. Kamata, F. Takahashi, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Improved Quality of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence: Phys. Stat. Sol. (c), 0, No. 7, 2658-2661(2003).
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| 9 |
K. Hoshino, S. Kako, and Y. Arakawa: Effects of growth interruption on the structural and optical properties of GaN self-assembled quantum dots: Mat. Res. Soc. Symp. Proc. Vol. 798, Y4.1.1, 2004.
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| 10 |
T.Yang, J.Tatebayashi, S.Tsukamoto, M.Nishioka, and Y.Arakawa: A narrow photoluminescence linewidth (< 17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition: to be published in Appl. Phy. Lett.
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| 11 |
Se-Ki Park, J. Tatebayashi, and Y. Arakawa: Formation of ultrahigh-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition: Appl. Phys. Lett. 84 no. 11 pp. 1877-1879 (2004).
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| 12 |
Se-Ki Park, J. Tatebayashi, and Y. Arakawa: Strutrural and optical properties of high-density ( > 1011/cm2) InAs QDs with varying Al(Ga)As matrix layer thickness: Physica E 21 pp. 279-284, 2004.
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| 13 |
Se-Ki Park, J. Tatebayashi, T. Nakaoka, T. Sato, Young Ju Park and Y. Arakawa: Enhanced Optical Porperties of High-Density (>1011/cm2) InAs/AlAs Quantum Dots by Hydrogen Passivation: Jpn. J. Appl. Phys. vol. 43, no. 4B, 2118-2121, 2004.
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| 14 |
Se-Ki Park, J. Tatebayashi, and Y. Arakawa: Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots: to be published in Jpn. J. Appl. Phys.
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| 15 |
K. Hoshino and Y. Arakawa: UV photoluminescence from GaN self-assembled quantum dots on AlxGa1-xN surfaces grown by metalorganic chemical vapor deposition: submitted to Physica Status Solidi.
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| 16 |
K. Hoshino, S. Kako, and Y. Arakawa: Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition: submitted to Applied Physics Letters.
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| 17 |
Masatoshi Kitamura, Tadahiro Imada, Satoshi Kako and Yasuhiko Arakawa: Time-of-Flight Measurement of Lateral Carrier Mobility in Organic Thin Films: Jpn. J. Appl. Phys., 43, 4B, 2326-2329 (2004).
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| 18 |
I.Takamiya, S.Tsukamoto, M.Shimoda, N.Miyashita, M.Arisawa, Y.Arakawa, and A.Nishida: Novel Palladium Catalyst supported on GaAs(001) using Ammonium-sulfide: submitted to Chem. Lett.
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| 19 |
N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Well: The European Phys. to be published in J. -Applied Physics.
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| 20 |
Q. Miao, T.-Q. Nguyen, T. Someya, G. B. Blanchet, and C. Nuckolls: Synthesis, Assembly, and Thin Film Transistors of Dihydrodiazapentacene: An Isostructural Motif for Pentacene: Journal. of the Amarican Chemical Society 125 (34), 10284-10287, 2003.
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<International Meetings>
| 1 |
H. Klausing, N. Kamata, F. Takahashi, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Improved Quality of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence: The 5th Int. Conf. on Nitride Semiconductors (ICNS-5), Mo-P1.056, p. 253, Nara, Japan(2003).
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| 2 |
K. Hoshino, S. Kako, and Y. Arakawa: Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescence: The 5th International Conference on Nitride Semiconductors, Tu-A2.2, p.76, Nara, Japan(2003).
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| 3 |
K. Watanabe, K. Hoshino, M. Nishioka, and Y. Arakawa: Control of Size and Density of GaN/AlN Self-Assembled Quantum Dots Grown by Molecular Beam Epitaxy: 5th Internatinal Conference on Nitride Semiconductors, Mo-P1.006, p.204, Nara, Japan(2003).
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| 4 |
M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Self-Assembled InAsSb Quantum Dots Grown on GaAs Substrates by Molecular-Beam Epitaxy: 16th International conference on InP and related materials, (2003).
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5
Invited |
Y. Arakawa: Quantum Dots for Nanophotonic Devices: The International Nanophotonics Symposium Handai, Osaka, Japan (2003).
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| 6 |
K. Hoshino, S. Kako, and Y. Arakawa: Growth and optical properties of GaN-based quantum dots: US-Japan Workshop on Frontiers of Nanoscale Science and Technology, P-22, pp.53-54, Tokyo, Japan(2003).
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| 7 |
S.K. Park, J. Tatebayashi, and Y. Arakawa: Structural and Optical Properties of High Density (>1011/cm2) InAs QDs with Varying Al(Ga)As Matrix Layer Thicknes: The 11th International Cnference on Modulated Semiconductor Structures, pp.60-61, Nara, Japan(2003).
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| 8 |
M. Kudo, T. Mishima, S. Iwamoto, T. Nakaoka, and Y. Arakawa: Long Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: The 11th International Cnference on Modulated Semiconductor Structures, Nara, Japan(2003).
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9
Invited |
Y. Arakawa: Fabrication and optical properties of quantum dots for nanophotonic devices: US-Japan Workshop on Frontiers of nanosclae science and technology, Tokyo, 2003: 2003
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| 10 |
M. Kudo, T. Mishima, S. Iwamoto, T. Nakaoka, and Y. Arakawa: Long-Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), Tokyo, PA22, p.55; 2003-7.
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| 11 |
M. Kitamura, T. Imada, S. Kako, and Y. Arakawa: Measurement of lateral carrier mobility in organic thin films using time of flight method: International Conference on Solid State Devices and Materials 2003, C-7-4, p770, Tokyo, Japan (2003).
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| 12 |
N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Well: The 10th Int. Conf. on Defects: Recognition, Imaging and Physics of Semiconductors (DRIP-X), Batz-sur-Mer, France(2003).
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| 13 |
S.K. Park, J. Tatebayashi, T. Nakaoka, T. Sato, Y.J. Park, and Y. Arakawa: Enhanced Optical Properties of High Density (>1011/cm2) InAs/AlAs Quantum Dots by Using Hydrogen Passivation: 2003 International Conference on Solid State Devices and Materials, pp.60-605 Tokyo, Japan (2003).
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| 14 |
S.K. Park, J. Tatebayashi, and Y. Arakawa: Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots: 2003 International Microprocesses and Nanotechnology Conference, pp.238-239 Tokyo, Japan (2003).
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| 15 |
T. Yang, J. Tatebayashi, S. Tsukamoto, M. Nishioka, and Y. Asakawa: Highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition: International Symposium on Quantum Dots and Photonic Crystals 2003, p. 21, Tokyo, Japan(2003).
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| 16 |
M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Size Reduction of GaSb Quantum Dots Covered with GaAs Grown by Molecular-Beam Epitaxy: International Symposium on Quantum Dots and Photonic Crystals 2003.
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| 17 |
M. Kitamura, S. Iwamoto, S Ishida and Y. Arakawa: Organic Light-Emitting Diodes with Photonic Crystals: International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-37, Tokyo(2003).
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| 18 |
T. Yang, J. Tatebayashi, S. Tsukamoto, M. Nishioka, and Y. Asakawa: Highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition: International Symposium on Quantum Dots and Photonic Crystals 2003, p. 21, Tokyo, Japan(2003).
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| 19 |
M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Size Reduction of GaSb Quantum Dots Covered with GaAs Grown by Molecular-Beam Epitaxy: The International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), Tokyo, Japan; P-7, p.27; 2003-11.
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| 20 |
K. Hoshino, S. Kako, and Y. Arakawa: Effects of growth interruption on the structural and optical properties of GaN self-assembled quantum dots: 2003 MRS Fall Meeting, Y4.1, p.620, Boston, USA(2003).
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| 21 |
S.K. Park, J. Tatebayashi, and Y. Arakawa: Enhanced PL of High Density (~1011/cm2) InAs QDs by using Graded Interface of GaAs/AlAs/GaAs: The fifth Pacific Rim Conference on Lasers and Electro-Optics, p.273 Taipei, Taiwan (2003).
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22
Invited |
Y. Arakawa: Progress in growth and optical property of GaN-based quantum dots: Inernational Workshop on Optoelectronics, Tainan Taiwan (2003).
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23
Invited |
Y. Arakawa: Progress in quantum dots for nanophotonic devices: Inernational Symposium on Optoelectronics, Kobe, Japan (2003).
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24
Plenary, Invited |
Y. Arakawa: Progress in quantum dots for nanoelectronics and nanophotonics: The 3rd International Conference on Advanced Materials and Devices, Jeju, Korea (2003).
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| 25 |
Y. Arakawa: Growth and optical properties of GaN-based quantum dots: Sweden-Japan Workshop on Nanoelectronics, Sweden (2003).
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26
Invited |
Y. Arakawa: Progress and prospects for GaN-based quantum dots: International Conference on Materials for Advanced Technologies, Singapore (2003).
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| 27 |
T. Someya, M. Kitamura, Y. Arakawa, and Y. Sano: Organic Field-Effect Transistors by Ultra-Fine Screen-Printing with Resolution of 20 ? m: 2003 Material Research Society Fall Meeting, K3.9, Boston, MA, December 1-5 2003.
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| 28 |
Y. Arakawa: Progress and prospects of nanophotpnic devices: International Symposium on Quantum Dots and Photonic Crystals, Tokyo, Japan (2003).
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| 29 |
S.Tsukamoto, M.Arisawa, M.Pristovsek, M.Shimoda, N.Miyashita, C.Theeraladanon, M.Nishioka, T.Ohno, Y.Arakawa, And A.Nishida: Novel Organopalladium Catalyst Material formed on Sulfur-terminated GaAs(001) Surfaces: The First International Congress on Bio-Nanointerface, p. 213, Tokyo, Japan(2003).
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| 30 |
G.R.Bell, M.Pristovsek, S.Tsukamoto, B.G.Orr, Y.Arakawa, and N.Koguchi: Scanning tunnelling microscopy of III-V epitaxial growth: in situ versus in vacuo: A Royal Microscopical Society Meeting: UK SPM 2004, Nottingham, UK (2004).
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| 31 |
Se-Ki Park, J. Tatebayashi, and Y. Arakawa: InAs/AlAs Quantum Dots with InGaAs Insertion Layer: Dependence of the Indium Composition and the Thickness: Quantum Dots Conference 2004.
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| 32 |
K. Hoshino and Y. Arakawa: Formation of High-density (>1.5x10^11 /cm^2) GaN self-assembled quantum dots by MOCVD: The Twelfth International conference on Metal Organic Vapor Phase Epitaxy, Hawaii,USA(2004).
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| 33 |
M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Self-Assembled InAsSb Quantum Dots Grown on GaAs Substrates by Molecular-Beam Epitaxy: 16th International Conference on InP and Related Materials: 2004.
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34
Invited |
Y. Arakawa: Growth and optical properties of GaN quantun dots: The 5th International Symposium on Blue Laser and Light Emitting Diodes, B6-1, Gyeongju, Korea (2004).
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| 35 |
Y. Arakawa, S. Kako, K. Hoshino: Growth and optical properties of GaN quantun dots: UK-Japan 10+10 Meeting on Nanophysics and Nanoelectronics, Oxford, UK (2004).
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36
Invited |
Y. Arakawa: Growth and optical properties of GaN-based quantun dots: 3rd Akasaki Research Center Symosum: 2004 International, Nagoya, Japan (2004).
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| 37 |
T. Someya, J. A. Rogers, and Z. Bao: Nanometer-scale organic field-effect transistors by lamination: International Symposium on Quantum Dots and Photonic Crystals 2003, University of Tokyo, Tokyo, November 17-18, 2003.
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| 38 |
T. Someya, M. Kitamura, Y. Arakawa, and Y. Sano: Organic Field-Effect Transistors by Ultra-Fine Screen-Printing with Resolution of 20 ? m: 2003 Material Research Society Fall Meeting, K3.9, Boston, MA, December 1-5 2003.
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| 39 |
T. Someya and T. Sakurai: Integration of Organic Field-Effect Transistors and Rubbery Pressure Sensors for Artificial Skin Applications: 2003 IEEE International Electron Devices Meeting (IEDM), Washington D.C., December 8 -10, 2003.
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| 40 |
T. Someya, P. Kim, C. Nuckolls, and J. T. Yardley: Carbon nanotube transistors operated in aqueous media: The International Conference on the Science and Application of Nanotubes for the year of 2003 (NT03), Seoul, Korea, July 7-11, 2003.
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| 41 |
T. Someya, J. A. Rogers, Z. Bao and H. E. Katz: Organic field-effect transistors by lamination: 22nd Electronic Materials Symposium (EMS-22) D7, Laforet Biwako, Moriyama, Shiga, July 2-4, 2003.
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| 42 |
T. Someya: Operation of nanotube transistors in aqueous environment for chemical sensor applications: US-Japan Workshop on Frontiers of Nanoscale Science and Technology, RCAST, University of Tokyo, Tokyo, July 10-12, 2003.
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| 43 |
T. Someya, H. E. Katz, P. Kim, C. Nuckolls, and J. T. Yardley: Nanotube and organic transistor-based chemical sensors: The First International Congress on Bio-Nanointerface, 23D-15-L6, Arcadia Ichigaya, Tokyo, May 19-24, 2003.
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| 44 |
T. Someya: Nanotube and organic transistors for sensors and optoelectronics applications: JSPS Japan-Sweden Colloquium, IT-universiteteti Kista, June 2-3, 2003.
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| 45 |
Y. Arakawa, M. Miyamura, K. Tachibana, K. Hoshino, S. Kako: Stranski-Krastanow growth and optical properties of self-assembled GaN quantum dots: Institute of Physics Conference Seriries Number 171,A R Long and J H Davies, Physics of Semicoductors 2002,61-68, 2003.
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