Y. Arakawa, M. Miyamura, K. Tachibana, K. Hoshino, S. Kako: Stranski-Krastanow growth and optical properties of self-assembled GaN quantum dots: Institute of Physics Conference Seriries Number 171, A R Long and J H Davies, Physics of Semicoductors 2002,61-68.

Masatoshi KITAMURA, Tadahiro IMADA, and Yasuhiko ARAKAWA: Organic Transistor Circuits for Application to Organic Light-Emitting-Diode Displays: Jpn. J. Appl. Phys., 42, 4B, 2483-2487 (2003).

Makoto Kudo, Tomoyoshi Mishima, Satoshi Iwamoto, Toshihiro Nakaoka, and Yasuhiko Arakawa: Long Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: to be published in Physica E: Low-dimensional Systems and Nanostructures.

K. Hoshino and Y. Arakawa: Effect of thermal treatment on structure of GaN self-assembled quantum dots grown by MOCVD: Phys. Stat. Sol. (c), 0, No. 4, 1101-1104(2003).

G.R.Bell, M.Pristovsek, S.Tsukamoto, B.G.Orr, Y.Arakawa, and N.Koguchi: In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001) during molecular beam epitaxial growth: Surface Science, vol.544, (2003) pp.234-240.

K. Hoshino, S. Kako, and Y. Arakawa: Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescence: Phys. Stat. Sol. (b), 240, No. 2, 322-325(2003).

M. Kitamura, T. Imada, and Y. Arakawa: Organic light-emitting diodes driven by pentacene-based thin-film transistors: Appl. Phys. Lett. 83, 3410-3412 (2003).

H. Klausing, N. Kamata, F. Takahashi, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Improved Quality of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence: Phys. Stat. Sol. (c), 0, No. 7, 2658-2661(2003).

K. Hoshino, S. Kako, and Y. Arakawa: Effects of growth interruption on the structural and optical properties of GaN self-assembled quantum dots: Mat. Res. Soc. Symp. Proc. Vol. 798, Y4.1.1, 2004.

T.Yang, J.Tatebayashi, S.Tsukamoto, M.Nishioka, and Y.Arakawa: A narrow photoluminescence linewidth (< 17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition: to be published in Appl. Phy. Lett.

Se-Ki Park, J. Tatebayashi, and Y. Arakawa: Formation of ultrahigh-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition: Appl. Phys. Lett. 84 no. 11 pp. 1877-1879 (2004).

Se-Ki Park, J. Tatebayashi, and Y. Arakawa: Strutrural and optical properties of high-density ( > 10¹¹/cm2) InAs QDs with varying Al(Ga)As matrix layer thickness: Physica E 21 pp. 279-284, 2004.

Se-Ki Park, J. Tatebayashi, T. Nakaoka, T. Sato, Young Ju Park and  Y. Arakawa: Enhanced Optical Porperties of High-Density (>10¹¹/cm2) InAs/AlAs Quantum Dots by Hydrogen Passivation: Jpn. J. Appl. Phys. vol. 43, no. 4B, 2118-2121, 2004.

Se-Ki Park, J. Tatebayashi, and Y. Arakawa: Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots: to be published in Jpn. J. Appl. Phys.

K. Hoshino and Y. Arakawa: UV photoluminescence from GaN self-assembled quantum dots on AlxGa1-xN surfaces grown by metalorganic chemical vapor deposition: submitted to Physica Status Solidi.

K. Hoshino, S. Kako, and Y. Arakawa: Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition: submitted to Applied Physics Letters.

Masatoshi Kitamura, Tadahiro Imada, Satoshi Kako and Yasuhiko Arakawa: Time-of-Flight Measurement of Lateral Carrier Mobility in Organic Thin Films: Jpn. J. Appl. Phys., 43, 4B, 2326-2329 (2004).

I.Takamiya, S.Tsukamoto, M.Shimoda, N.Miyashita, M.Arisawa, Y.Arakawa, and A.Nishida: Novel Palladium Catalyst supported on GaAs(001) using Ammonium-sulfide: submitted to Chem. Lett.

N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Well: The European Phys. to be published in J. -Applied Physics.

Q. Miao, T.-Q. Nguyen, T. Someya, G. B. Blanchet, and C. Nuckolls: Synthesis, Assembly, and Thin Film Transistors of Dihydrodiazapentacene: An Isostructural Motif for Pentacene: Journal. of the Amarican Chemical Society 125 (34), 10284-10287, 2003.

H. Klausing, N. Kamata, F. Takahashi, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Improved Quality of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence: The 5th Int. Conf. on Nitride Semiconductors (ICNS-5), Mo-P1.056, p. 253, Nara, Japan(2003).

K. Hoshino, S. Kako, and Y. Arakawa: Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescence: The 5th International Conference on Nitride Semiconductors, Tu-A2.2, p.76, Nara, Japan(2003).

K. Watanabe, K. Hoshino, M. Nishioka, and Y. Arakawa: Control of Size and Density of GaN/AlN Self-Assembled Quantum Dots Grown by Molecular Beam Epitaxy: 5th Internatinal Conference on Nitride Semiconductors, Mo-P1.006, p.204, Nara, Japan(2003).

M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Self-Assembled InAsSb Quantum Dots Grown on GaAs Substrates by Molecular-Beam Epitaxy: 16th International conference on InP and related materials, (2003).

Y. Arakawa: Quantum Dots for Nanophotonic Devices: The International Nanophotonics Symposium Handai, Osaka, Japan (2003).

K. Hoshino, S. Kako, and Y. Arakawa: Growth and optical properties of GaN-based quantum dots: US-Japan Workshop on Frontiers of Nanoscale Science and Technology, P-22, pp.53-54, Tokyo, Japan(2003).

S.K. Park, J. Tatebayashi, and Y. Arakawa: Structural and Optical Properties of High Density (>1011/cm2) InAs QDs with Varying Al(Ga)As Matrix Layer Thicknes: The 11th International Cnference on Modulated Semiconductor Structures, pp.60-61, Nara, Japan(2003).

M. Kudo, T. Mishima, S. Iwamoto, T. Nakaoka, and Y. Arakawa: Long Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: The 11th International Cnference on Modulated Semiconductor Structures, Nara, Japan(2003).

Y. Arakawa: Fabrication and optical properties of quantum dots for nanophotonic devices: US-Japan Workshop on Frontiers of nanosclae science and technology, Tokyo, 2003: 2003

M. Kudo, T. Mishima, S. Iwamoto, T. Nakaoka, and Y. Arakawa: Long-Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), Tokyo, PA22, p.55; 2003-7.

M. Kitamura, T. Imada, S. Kako, and Y. Arakawa: Measurement of lateral carrier mobility in organic thin films using time of flight method: International Conference on Solid State Devices and Materials 2003, C-7-4, p770, Tokyo, Japan (2003).

N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Well: The 10th Int. Conf. on Defects: Recognition, Imaging and Physics of Semiconductors (DRIP-X), Batz-sur-Mer, France(2003).

S.K. Park, J. Tatebayashi, T. Nakaoka, T. Sato, Y.J. Park, and Y. Arakawa: Enhanced Optical Properties of High Density (>10¹¹/cm²) InAs/AlAs Quantum Dots by Using Hydrogen Passivation: 2003 International Conference on Solid State Devices and Materials, pp.60-605 Tokyo, Japan (2003).

S.K. Park, J. Tatebayashi, and Y. Arakawa: Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots: 2003 International Microprocesses and Nanotechnology Conference, pp.238-239 Tokyo, Japan (2003).

T. Yang, J. Tatebayashi, S. Tsukamoto, M. Nishioka, and Y. Asakawa: Highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition: International Symposium on Quantum Dots and Photonic Crystals 2003, p. 21, Tokyo, Japan(2003).

M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Size Reduction of GaSb Quantum Dots Covered with GaAs Grown by Molecular-Beam Epitaxy: International Symposium on Quantum Dots and Photonic Crystals 2003.

M. Kitamura, S. Iwamoto, S Ishida and Y. Arakawa: Organic Light-Emitting Diodes with Photonic Crystals: International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-37, Tokyo(2003).

T. Yang, J. Tatebayashi, S. Tsukamoto, M. Nishioka, and Y. Asakawa: Highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition: International Symposium on Quantum Dots and Photonic Crystals 2003, p. 21, Tokyo, Japan(2003).

M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Size Reduction of GaSb Quantum Dots Covered with GaAs Grown by Molecular-Beam Epitaxy: The International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), Tokyo, Japan; P-7, p.27; 2003-11.

K. Hoshino, S. Kako, and Y. Arakawa: Effects of growth interruption on the structural and optical properties of GaN self-assembled quantum dots: 2003 MRS Fall Meeting, Y4.1, p.620, Boston, USA(2003).

S.K. Park, J. Tatebayashi, and Y. Arakawa: Enhanced PL of High Density (~10¹¹/cm²) InAs QDs by using Graded Interface of GaAs/AlAs/GaAs: The fifth Pacific Rim Conference on Lasers and Electro-Optics, p.273 Taipei, Taiwan (2003).

Y. Arakawa: Progress in growth and optical property of GaN-based quantum dots: Inernational Workshop on Optoelectronics, Tainan Taiwan (2003).

Y. Arakawa: Progress in quantum dots for nanophotonic devices: Inernational Symposium on Optoelectronics, Kobe, Japan (2003).

Y. Arakawa: Progress in quantum dots for nanoelectronics and nanophotonics: The 3rd International Conference on Advanced Materials and Devices, Jeju, Korea (2003).

Y. Arakawa: Growth and optical properties of GaN-based quantum dots: Sweden-Japan Workshop on Nanoelectronics, Sweden (2003).

Y. Arakawa: Progress and prospects for GaN-based quantum dots: International Conference on Materials for Advanced Technologies, Singapore (2003).

T. Someya, M. Kitamura, Y. Arakawa, and Y. Sano: Organic Field-Effect Transistors by Ultra-Fine Screen-Printing with Resolution of 20 ? m: 2003 Material Research Society Fall Meeting, K3.9, Boston, MA, December 1-5 2003.

Y. Arakawa: Progress and prospects of nanophotpnic devices: International Symposium on Quantum Dots and Photonic Crystals, Tokyo, Japan (2003).

S.Tsukamoto, M.Arisawa, M.Pristovsek, M.Shimoda, N.Miyashita, C.Theeraladanon, M.Nishioka, T.Ohno, Y.Arakawa, And A.Nishida: Novel Organopalladium Catalyst Material formed on Sulfur-terminated GaAs(001) Surfaces: The First International Congress on Bio-Nanointerface, p. 213, Tokyo, Japan(2003).

G.R.Bell, M.Pristovsek, S.Tsukamoto, B.G.Orr, Y.Arakawa, and N.Koguchi: Scanning tunnelling microscopy of III-V epitaxial growth: in situ versus in vacuo: A Royal Microscopical Society Meeting: UK SPM 2004, Nottingham, UK (2004).

Se-Ki Park, J. Tatebayashi, and Y. Arakawa: InAs/AlAs Quantum Dots with InGaAs Insertion Layer: Dependence of the Indium Composition and the Thickness: Quantum Dots Conference 2004.

K. Hoshino and Y. Arakawa: Formation of High-density (>1.5x10^11 /cm^2) GaN self-assembled quantum dots by MOCVD: The Twelfth International conference on Metal Organic Vapor Phase Epitaxy, Hawaii,USA(2004).

M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Self-Assembled InAsSb Quantum Dots Grown on GaAs Substrates by Molecular-Beam Epitaxy: 16th International Conference on InP and Related Materials: 2004.

Y. Arakawa: Growth and optical properties of GaN quantun dots: The 5th International Symposium on Blue Laser and Light Emitting Diodes, B6-1, Gyeongju, Korea (2004).

Y. Arakawa, S. Kako, K. Hoshino: Growth and optical properties of GaN quantun dots: UK-Japan 10+10 Meeting on Nanophysics and Nanoelectronics, Oxford, UK (2004).

Y. Arakawa: Growth and optical properties of GaN-based quantun dots: 3rd Akasaki Research Center Symosum: 2004 International, Nagoya, Japan (2004).

T. Someya, J. A. Rogers, and Z. Bao: Nanometer-scale organic field-effect transistors by lamination: International Symposium on Quantum Dots and Photonic Crystals 2003, University of Tokyo, Tokyo, November 17-18, 2003.

T. Someya, M. Kitamura, Y. Arakawa, and Y. Sano: Organic Field-Effect Transistors by Ultra-Fine Screen-Printing with Resolution of 20 ? m: 2003 Material Research Society Fall Meeting, K3.9, Boston, MA, December 1-5 2003.

T. Someya and T. Sakurai: Integration of Organic Field-Effect Transistors and Rubbery Pressure Sensors for Artificial Skin Applications: 2003 IEEE International Electron Devices Meeting (IEDM), Washington D.C., December 8 -10, 2003.

T. Someya, P. Kim, C. Nuckolls, and J. T. Yardley: Carbon nanotube transistors operated in aqueous media: The International Conference on the Science and Application of Nanotubes for the year of 2003 (NT03), Seoul, Korea, July 7-11, 2003.

T. Someya, J. A. Rogers, Z. Bao and H. E. Katz: Organic field-effect transistors by lamination: 22nd Electronic Materials Symposium (EMS-22) D7, Laforet Biwako, Moriyama, Shiga, July 2-4, 2003.

T. Someya: Operation of nanotube transistors in aqueous environment for chemical sensor applications: US-Japan Workshop on Frontiers of Nanoscale Science and Technology, RCAST, University of Tokyo, Tokyo, July 10-12, 2003.

T. Someya, H. E. Katz, P. Kim, C. Nuckolls, and J. T. Yardley: Nanotube and organic transistor-based chemical sensors: The First International Congress on Bio-Nanointerface, 23D-15-L6, Arcadia Ichigaya, Tokyo, May 19-24, 2003.

T. Someya: Nanotube and organic transistors for sensors and optoelectronics applications: JSPS Japan-Sweden Colloquium, IT-universiteteti Kista, June 2-3, 2003.

Y. Arakawa, M. Miyamura, K. Tachibana, K. Hoshino, S. Kako: Stranski-Krastanow growth and optical properties of self-assembled GaN quantum dots: Institute of Physics Conference Seriries Number 171,A R Long and J H Davies, Physics of Semicoductors 2002,61-68, 2003.

K. Watanabe, K. Hoshino, M. Nishioka, and Y. Arakawa: GaN/AlN Self-Assembled Quantum Dot Growth by Molecular Beam Epitaxy: 22nd Electronic Materials Symposium, H-15, p.279, Laforet Biwako, Japan(2003).

K. Hoshino, S. Kako, and Y. Arakawa: MOCVD growth of stacked GaN quantum dot structures with intense photoluminescence: 22nd Electronic Materials Symposium, F10, pp. 179-180, Laforet Biwako(2003).

工藤真、三島友義、中岡俊裕、岩本敏、荒川泰彦: GaAs基板上GaSb量子ドットからの1.3? m帯フォトルミネッセンス: 第64回応用物理学会学術講演会, 31p-K-18, p. 272, 福岡大学 (2003).

星野勝之、加古敏、荒川泰彦: MOCVD法によるAlGaN上GaN量子ドットのS-K成長: 第６４回応用物理学会学術講演会, 30a-G-5, p. 291, 福岡大学(2003).

松原崇史、戸田泰則、森田隆二、山下幹雄、星野勝之、染谷隆夫, 荒川泰彦: 近赤外励起におけるバルクGaNの多光子吸収の観測: 第50回応用物理学関係連合講演会 (2003).

楊涛、館林 潤、塚本史郎、西岡政雄、荒川泰彦: 歪みバッファ層によるInAs量子ドットの高均一・高密度化: 第64回応用物理学会学術講演会, 31p-K-5, p. 268, 福岡大学 (2003).

渡邉克之、星野勝之、西岡、荒川泰彦: MBE法によるGaN/AlN自己形成量子ドットの形成とフォトルミネッセンス: 第64回応用物理学会学術講演会, 30a-G-5, p.291, 福岡大学(2003).

染谷隆夫: 有機トランジスタの微細化とナノ印刷: 第64回応用物理学会学術講演会、薄膜・表面物理分科会企画　「原子レベル制御ナノテクノロジー：A Pre-Symposium of ACSIN-7」シンポジウム、平成15年8月31日: 2003

染谷隆夫: 有機トランジスタと回路技術: NPOサーキットネットワーク定例会合、回路会館、東京、平成１５年９月１９日: 2003

荒川泰彦: 量子ドットの自己形成過程とその物理: ２００３年秋季日本物理学会: 2003

S.K. Park, J. Tatebayashi, H.T. Oh, Y.J Park, and Y. Arakawa: Optical Properties of Hydrogen Passivated InAs/AlAs Quantum Dots Structures: The 64th Japan Society of Applied Physics (Fall Meeting), Fukuoka, Japan (2003).

角田浩二，館林潤，西岡政雄，荒川泰彦: InP(100)基板上のInAs自己形成ナノ構造の成長: 第６４回応用物理学会学術講演会, 31p-K-10, p.270 , 福岡大学(2003).

塚本史郎、有澤光弘、下田正彦、Markus Pristovsek、宮下直樹、高宮郁子、荒川泰彦、西田篤司: 硫黄終端GaAs(001)基板上に結合した有機金属錯体の触媒活性: ２００３年秋季第６４回応用物理学会学術講演会，福岡大学(2003).

塚本史郎、Gavin R. Bell、Markus Pristovsek、Brad G. Orr、荒川泰彦、小口信行: InAs量子ドットMBE成長時その場STM直接観察: ２００３年秋季第６４回応用物理学会学術講演会，福岡大学(2003).

楊涛、館林 潤、塚本史郎、西岡政雄、荒川泰彦: 歪みバッファ層によるInAs量子ドットの高均一・高密度化: ２００３年秋季第６４回応用物理学会学術講演会，福岡大学(2003).

工藤　真,　三島友義,　中岡俊裕,　岩本敏,　荒川泰彦: GaAs基板上GaSb量子ドットからの1.3μm帯フォトルミネッセンス: 第64回応用物理学会学術講演会, 31p-K-18, p.272; 2003-9.

荒川泰彦: 半導体量子ドットの自己形成とその物性制御 : 神奈川サイエンスアカデミー: 2003.

染谷隆夫: 夢をかたちに・・・・実現に挑む有機半導体開発の最新動向: 「実装技術ロードマップ2003(JEITA)報告」公開講演会、回路会館、東京、平成１５年１１月１０日: 2003.

染谷隆夫、桜井貴康: 有機トランジスタと集積回路: 応用電子物性分科会研究例会「有機分子デバイス〜光から電子まで〜」、島津製作所関西支社マルチホール、大阪、平成１５年１１月１２日、応用電子物性分科会誌　第9巻　第5号、241-246、2003.

染谷隆夫: 有機トランジスタとフレキシブル大面積エレクトロニクスへの応用: 東京大学研究連携組織「東大ナノリンク」講演会、東京大学生産技術研究所第4会議室、東京、平成１５年１２月２４日: 2003.

高宮郁子、宮下直樹、有澤光弘、塚本史郎、下田正彦、荒川泰彦、西田篤司: 新規ＧａＡｓ担持型パラジウム錯体の創成: 日本薬学会第１２４年会，大阪ＡＴＣ: 2004.

渡邉克之、西岡政雄、荒川泰彦: MBE法により作製したGaInNAs自己形成量子ドット: 第51回応用物理学関係連合講演会、30a-YG-6、346、東京工科大、2004.

朴 世起、館林 潤、荒川泰彦: Optical properties of InAs/AlAs quantum dots with Ga(In)As insertion layer: 第51回応用物理学関係連合講演会 29a-ZE-5, (2004): 2004

星野勝之、荒川泰彦: MOCVD法による高密度(〜1.5x10^11 cm^-2)GaN量子ドットの作製: 第51回応用物理学関係連合講演会, 28p-YN-8, p.I-373, 東京工科大学(2004).

C. O. Tang、北村　雅季、荒川　泰彦: ペンタセン薄膜トランジスタの電気特性と表面モーフォロジ: 第5１回応用物理学関係連合講演会, 29p-ZN-1, p.1469, 東京工科大学(2004).

高山俊雄、工藤一秋、北村雅季、小林恭、荒川泰彦: Alq3型可溶性高分子錯体の合成とその有機EL素子への応用: 第51回応用物理学関連連合講演会, 28a-ZQ-10, p1459, 東京工科大学 (2004).

楊涛、館林 潤、塚本史郎、荒川泰彦: 狭小なPL半値幅（＜17ｍｅＶ）を有する高均一InAs量子ドット: 2004年春季第51回応用物理学関係連合講演会，東京工科大学: 2004.

工藤　真,　三島友義,　中岡俊裕,　岩本敏,　荒川泰彦: GaAs基板上InAs量子ドットへのSb照射の検討: 2004年春季応用物理学関係連合講演会, 30a-YG-8, p.347; 2004-3.

Mingsheng Xu, Masatoshi Kitamura, Satomi Ishida, Shiro Tsukamoto, and Yasuhiko Arakawa: Self-assembly of thiolated oligonucleotides on gallium arsenide surface: atomic force microscopy study: 2004年春季第51回応用物理学関係連合講演会，東京工科大学: 2004.