M.Pristovsek, S.Tsukamoto: In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (0 0 1) in molecular beam epitaxy: Journal of Crystal Growth, vol.265, pp.425-433, (2004)

O.Pulci, K.Fleischer, M.Pristovsek, S.Tsukamoto, R.Del Sole and W.Richter: Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110): Journal of Physics: Condensed Matter, vol.16, pp.S4367-S4374, (2004)

N.Oyama, A.Ohtake, S.Tsukamoto, N.Koguchi, and T.Ohno: Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations: Japanese Journal of Applied Physics, vol. 43, pp.L 1422-L 1424, (2004)

M. Kitamura, T. Imada, S. Kako and Y. Arakawa: Time-of-Flight Measurement of Lateral Carrier Mobility in Organic Thin Films: Jpn. J. Appl. Phys., 43, 4B, 2326-2329 (2004)

S.K. Park, J. Tatebayashi, and Y. Arakawa: Formation of ultra high-density InAs/AlAs quantum dots by metal organic chemical vapor deposition: Appl. Phys. Lett. 84 no. 11 pp. 1877-1879　(2004)

S.K. Park, J. Tatebayashi, T. Nakaoka, T. Sato, Y.J. Park, and Y. Arakawa: Enhanced Optical Porperties of High-Density (>1011/cm²) InAs/AlAs Quantum Dots by Hydrogen Passivation: Jpn. J. Appl. Phys. vol. 43, no. 4B, 2118-2121(2004)

Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Masao Nishioka, and Yasuhiko Arakawa: Narrow photoluminescence linewidth (< 17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition: Applied Physics Letters, 84, 15, 2817-2819 (2004)

M. Kudo, T. Mishima, S. Iwamoto, T. Nakaoka, and Y. Arakawa: Long-Wavelength Luminescence from GaSb Quantum Dots Grown on GaAs Substrates: Physica E: Low-dimensional Systems and Nanosrtructures E 21, 275 (2004)

S.K. Park, J. Tatebayashi, and Y. Arakawa: Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots: Jpn. J. Appl. Phys.,43,6B,3828-3830 (2004)

Toshio Takayama, Masatoshi Kitamura, Yasushi Kobayashi, Yasuhiko Arakawa, Kazuaki Kudo: Soluble Polymer Complexes Having AlQ3-Type Pendent Groups: Macromolecular Rapid Communications, 25, 1171-1174 (2004)

K. Hoshino, S. Kako, and Y. Arakawa: Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition: Applied Physics Letters, 85, 1262-1264 (2004)

K. Hoshino and Y. Arakawa: UV photoluminescence from GaN self-assembled quantum dots on AlxGa1-xN surfaces grown by metalorganic chemical vapor deposition: Physica Status Solidi (c), 1, 2516-2519 (2004)

N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa: Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Well: The European Phys. J. -Appl. Phys., 27, 271-273, 2004

Tao Yang, Shiro Tsukamoto, Jun Tatebayashi, Masao Nishioka, and Yasuhiko Arakawa: Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/GaAs by low-pressure metalorganic chemical vapor deposition: Applied Physics Letters, 85, 14, 2753-2755 (2004)

T.Yang, S.Tsukamoto, J.Tatebayashi, M.Nishioka, and Y.Arakawa: Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/GaAs by low-pressure metalorganic chemical vapor deposition: Applied Physics Letters, vol.85, pp.2753-2755, (2004)

K. Hoshino and Y. Arakawa: Formation of high-density GaN self-assembled quantum dots by MOCVD: Jounal of Crystal Growth, 272, 161-166 (2004)

M. Kudo, T. Nakaoka, S. Iwamoto  and Y. Arakawa: InAsSb quantum dots grown on GaAs substrates by molecular-beam epitaxy: Japanese Journal of Applied Physics Vol. 44, No. 1, pp.L45-L47(2004)

Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Yasuhiko Arakawa: Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 ?m by metalorganic chemical vapor deposition: Physica E, 26, 77-80 (2005)

Se-Ki Park, J. Tatebayashi, and Y. Arakawa: InAs/AlAs Quantum Dots with InGaAs Insertion Layer: Dependence of the Indium Composition and the Thickness: Physica E 26 p138-142 (International Conference on Quantum Dots, Bahnf, Canada) (2004)

Masatoshi Kitamura, Satoshi Iwamoto, Yasuhiko Arakawa: Enhanced Luminance Efficiency from Organic Light-Emitting Diodes with Two-Dimensional Photonic Crystal: Jpn. J. Appl. Phys. 44, 4B, 2844-2848 (2005)

Shingo Iba, Tsuyoshi Sekitani, Yusaku Kato, and Takao Someya: Control of threshold voltage of organic field-effect transistors with double gate structures : Applied Physics Letters, to be published

Se-Ki Park, J. Tatebayashi, and Y. Arakawa: InAs/AlAs Quantum Dots with InGaAs Insertion Layer: Dependence of the Indium Composition and the Thickness: International Conference on Quantum Dots, Bahnf, Canada (Physica E 26 p138-142)(2004)

Tao Yang, Jun Tatebayashi, Shiro Tsukamoto and Yasuhiko Arakawa: A Narrow Photoluminescence Linewidth (< 17 meV) from Highly Uniform Self-Assembled InAs/GaAs Quantum Dots: Quantum Dots 2004, TP1, p. 85, May 10-13, 2004, Banff, Canada (2004)

Y. Arakawa: Progress in growth and optical properties of GaN-based quantum dots: International Conference on Metal Organic Vapor Epitaxy 2004, Hawai, USA (2004)

K. Hoshino and Y. Arakawa: Formation of High-density (>1.5x10^11 /cm^2) GaN self-assembled quantum dots by MOCVD: The Twelfth International conference on Metal Organic Vapor Phase Epitaxy, p. 9, Hawaii,USA(2004)

Tao Yang, Shiro Tsukamoto, Jun Tatebayashi, Masao Nishioka, and Yasuhiko Arakawa: Controlling the uniformity of self-assembled InAs/GaAs quantum dots by a combined GaAs/InGaAs strained buffer layer: 2004 International Conference on Indium Phosphide and Related Materials (16th IPRM),TuB2-4, pp. 81-84, May 31-June 4, 2004, Kagoshima, Japan (2004)

Y. Arakawa: Progress in fabrication and optical properties of GaN-based quantum dots: 4th International Conference on Physics of Light Matter, St. Persburg, Russia (2004)

M. Kudo, T. Nakaoka, S. Iwamoto and Y. Arakawa: Self-assembled InAsSb quantum dots grown on GaAs substrates by molecular-beam epitaxy: 16th Int. Conf. InP and Related Mater., FB1-4, p.687, Kagoshima (2004)

S.Tsukamoto, G.R.Bell, Y.Arakawa: In-situ Scanning Tunneling Microscopy Observation of InAs Quantum Dots on GaAs(001) during Molecular Beam Epitaxy Growth: Sixteenth International Conference on Indium Phosphide and Related Materials (IPRM’04), TuB-2-1, pp.68-73, Kagoshima, Japan (2004)

T.Fukuda, J.Tatebayashi, M.Nishioka, Y.Arakawa: A very narrow photoluminescence broadening(< 16 meV) from 〜1.5 ?m self-assembled InAs quantum dots at room temperature: The abstract of the 27th International Conference on the Physics of Semiconductors, pp. 162, J5 110, Flagstaff, USA (2004)

Y. Arakawa: Advaces in Semicondutor Nanostructures for Ubiquitous Communication Society: 2004 International Nanotech Symposium (NANO Korea 2004)

Y. Arakawa: Progress in fabrication and optical properties of GaN-based quantum dots: Fourth IEEE Conference on Nanotechnology, Munic, Germany (2004)

S. Tsukamoto, G.R.Bell, A.Ishii, K.Ono, and Y.Arakawa: Atomic-structure study of InAs wetting layer between InAs Quantum Dots on GaAs(001) surface by in situ STM placed inside MBE growth chamber: The 13th International Conference on Molecular Beam Epitaxy, THP18, p.421-422, Edinburgh, Scotland, UK (2004)

Masatoshi Kitamura, Satoshi Iwamoto and Yasuhiko Arakawa: Enhanced Luminance Efficiency from Organic Light-Emitting Diodes with 2D Photonic Crystal: 2004 Int. Conf. Solid State Devices and Materials, September 15-17, A-4-1, p160-161, Tokyo, Japan (2004)

C. O. Tang, M. Kitamura, and Y. Arakawa: Grain size dependence of field-effect mobility in pentacene-based thin-film transistors: International Conference on Solid State Devices and Materials 2004, F-9-5, Tokyo, Japan (2004)

T.Someya: Organic transistor integrated circuits for large-area electronics applications: COE International Symposium on Applied Physics on Strong Correlation, Takeda Hall, University of Tokyo, Tokyo: 2004

S.Tsukamoto and Y.Arakawa: Progress in growth of In-As-based quantum dots and STM in-situ monitoring : The 5th International Workshop on Semiconductor Quantum Structures, Seoul, Korea (2004)

Y. Arakawa: Fabrication and optical properties of quantum dots for advanced photonic devices: The 1st Functionality of Organized Nanostructures(FON'04), Tsukuba, Japan (2004)

Y. Arakawa: Progress and Prospects of Quantum Dots for Nanophotonic Device Applications: Frontiers in Nanoscle Science and Technology, A Workshop on Coherent Electronics, Quantum Information Processing, Quantum Optoelectronics, Harvard, USA (2004)

Y. Arakawa: Advances in Physics and Growth Technologies of Quantu, Dots for Nanophotonic Devices: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Brisbane, Australia(2004)

Y. Arakawa: Advances in Physics and Growth Technologies of Quantu, Dots for Nanophotonic Devices: The 3rd Asian Conference on Chemical Vapro Deposition, Taipei, Taiwan (2004)

Y. Arakawa: Advances in Physics and Growth Technologies of Quantu, Dots for Nanophotonic Devices: The 6th RIES-Hokudai Symposium on Chou, Sapporo, Japan (2004)

Y. Arakawa: Progress in growth and optical properties of quantum dots for future photonic devices: The 31st International Symposium on Compound Semiconductors (ISCS-2004), National University, Seoul, Korea (2004)

T. Sekitani, S. Iba, Y. Kato, T. Sakurai and T. Someya: Thermal Tolerance of Encapsulated Organic Field-Effect Transistors on Plastic Films:  International Symposium on Quantum Dots and Photonic Crystals 2005, Toranomon Pastoral, Tokyo

Y.Kato, T.Sekitani, S.Iba, T.Sakurai, and T.Someya: Manufacturing process and characterization of organic diode-based sheet thermal sensors: Third International Conference on Molecular Electronics and Bioelectronics (M&BE3),4O-A09、ｐ134, National Center of Sciences (National Institute of Informatics), Tokyo

T.Someya: Recent Progresses and future prospects of organic transistor integrated circuits for large-area sensors: Japan-Germany Colloquium 2005 Semiconductor Physics and Technology, Dresden University of Technology, Germany

N. Kumagai, K. Watanabe, S. Iwamoto, S. Tsukamoto, and Y. Arakawa: Enhancement of photoluminescence intensity of InAs quantum dots by p-type modulation doping: International  Symposium on Quantum Dots and Photonic Crystals 2005, P-3 (Tokyo, Japan, March 7-8, 2005).

M. Kudo, T. Sato, T. Nakaoka, S. Iwamoto and Y. Arakawa: Closely-stacked InAs/GaSb quantum dots grown by molecular beam epitaxy: Int. Symp. Quantum dots and photonic crystals 2005

S.Tsukamoto A.Ishii, G.Bell, and Y.Arakawa: Atomic-scale studies of InAs quantum dots evolution mechanism on GaAs(001): The International Symposium on Quantum Dots and Photonic Crystals 2005 (ISQDPC2005), D-4, pp.14 , Tokyo, Japan (2004).

A.Ishii, S.Oshima, S.Tsukamoto and Y.Arakawa: Study for initial stage of InAs quantum dot formation on GaAs(001) using kinetic Monte Carlo simulation: The International Symposium on Quantum Dots and Photonic Crystals 2005 (ISQDPC2005), P-17, pp.38 , Tokyo, Japan (2004).

R. Hashimoto, M. Kushibe, M. Ezaki, S.H. Liu, M. Nishioka and Y. Arakawa: Enhancement of photoluminescence in InAs quantum dots structure with GaInNAs capping layer grown by MOCVD: International Symposium on Quantum Dots and Photonic Crystals 2005, P-5, Tokyo, Japan: 2005

Tao Yang, Jun Tatebayashi, and Yasuhiko Arakawa: Formation of self-assembled InAs/GaAs quantum dots with an ultranarrow photoluminescence linewidth of ~11 meV by rapid thermal annealing:  The 17th Indium Phosphide and Related Materials Conference, 8th - 12th May 2005, Glasgow, Scotland, UK (2005)

S.Iba, T.Sekitani, Y.Kato, T.Sakurai, T.Someya: Pentacene Field-effect Transistors with 230-nm-thick Polyimide Gate Dielectric Layers: 2005 MRS Spring Meeting, Moscone West Convention Center, H3.4, San Francisco, U.S.A: 2005

Y.Kato, T.Sekitani1, S.Iba, T.Sakurai, and T.Someya: Temperature Dependence of I-V Characteristics of Organic PN Diodes and Their Application to Sheet Thermal Sensors: 2005 MRS Spring Meeting, Moscone West Convention Center, H2.9, San Francisco, U.S.A.

A.Ishii, S.Tsukamoto, G.R.Bell, and Y.Arakawa: Initial stage of InAs quantum dot formation on GaAs(001) studies using kinetic Monte Carlo simulation: 13th International Congress on Thin Films / 8th Atomically Controlled Surfaces, Interfaces and Nanostructures (ICTF13/ACSIN 8),  Stockholm, SWEDEN (2005), to be presented