中岡　俊裕　(TOSHIHIRO NAKAOKA)

氏名

中岡俊裕（TOSHIHIRO NAKAOKA）

所属

東京大学生産技術研究所
153-8505 東京都目黒区駒場4ー6ー1
Email:

職歴

10/2008- 科学技術振興機構 さきがけ 革新的次世代デバイスを目指す材料とプロセス　研究者
11/2007- 東京大学 生産技術研究所 特任准教授
09/2006-10/2007 東京大学 生産技術研究所 特任講師
08/2005-04/2006 ドイツミュンヘン工科大学Walter Schottky研究所 客員研究員
04/2002-08/2006 東京大学 先端科学技術研究センター 特任助手
04/2001-03/2002 東京大学 生産技術研究所 研究機関研究員

学歴

平成13年(2001年)3月 博士（理学）（大阪大学）取得　（指導教官：邑瀬和生教授）

Experimental research in nanostructural dynamics of chalcogenide glasses investigated by Raman scattering and photoluminescence measurements under the direction of Prof. Murase. Thesis: "Investigation of nanostructural dynamics and rigidity percolation in network glasses."

平成13年(2001年)3月 大阪大学大学院理学研究科　博士後期課程物理学専攻修了
平成11年(1999年)3月 大阪大学大学院理学研究科　博士前期課程物理学専攻修了
平成9年(1997年）3月 大阪大学理学部物理学科　卒業

所属学会

日本物理学会 応用物理学会

専門分野

ナノエレクトロニクス、 電子物性、光物性

研究テーマ　

• Single photon and/or electron quantum devices using self-assembled quantum dots
• Converts between elementary excitations in solids.
• Quantum state transfer between photon and electron.
• Physics of electronic and optical properties in quantum dot.
• Physics and controll of spin or g-factor in quantum dot
• Nano-cavity effects, photonic crystal and plasmonics
• Photo-induced phenomena in semiconductors

学会及び社会における活動等　

現地実行委員 (Local Organizing Committee): 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), 2008, April, Tokyo
財団法人 光産業技術振興協会、フォトニックネットワーク推進機構 「フォトニックネットワーク技術の研究開発」 次世代光スイッチノード実現技術の開発グループメンバー （H17-H18)
日本−イタリア　ナノテクノロジー国際連携、グローバル連携研究拠点網構築事業 実施メンバー（H18〜現在）

学術論文等の審査：外国語学術論文（Phys. Rev. Lett.誌など）４件/ H19-H20　

Grants

研究助成:

1. 科学技術事業団(JST)戦略的創造研究推進事業（さきがけ）　研究領域「革新的次世代デバイスを目指す材料とプロセス」(2008.10〜) "量子ドットを用いた単電荷・スピン・光機能融合デバイス"　研究代表者
2. 日本学術振興会科学研究費補助金 若手研究 (A) (2007〜2009) "単電子トランジスタを用いた単一光子発生素子", 研究代表者
3. 日本学術振興会科学研究費補助金 若手研究 (B) (2005〜2006) "自己形成量子ドットにおけるｇ因子制御と単一スピンのコヒーレント操作", 研究代表者
4. 日本学術振興会科学研究費補助金 若手研究 (B) (2003〜2004) "マイクロマシンによる, 歪、フォノンを介した量子ドット制御の研究", 研究代表者

研究内容

2007-

• Devices for quantum information technology: Single electron/photon devices.



2005-2006

• Fabrication and experimental measurement of single electron transistor using self-assembled dots.
• Time-resolved measurement on quantum mechanically coupled exciton states in a quantum dot molecule (QDM), which is the first observation of PL decay in single QDM. We have also shown tuning of radiative recombination rate as fraction of direct exciton character is varied.



2003-2005

• Experimental and theoretical investigation of g-factor of self-assembled quantum dots. Knowledge of electron and hole g-factors, which are the coefficient connecting spin moment with magnetic one, is important to design such spin-based devices. For example, the system with a large g-factor is preferable for controlling spin-qubit while near-zero electron g-factor is suitable to design a quantum receiver. We have investigated the g-factor in self-assembled dots by single dot spectroscopy under applied magnetic field and by 8 band kp calculation. We have demonstrated experimentally and theoretically that the g-factor in InGaAs self-assembled dots can be tuned by changing the dot-size and/or by modifying strain.



2003-2004

• Time resolved photoluminescence measurement and single dot spectroscopy of vertically-stacked self-assembled quantum dots. We have observed a delay of PL due to non-resonant tunneling between the stacked dots.



2002-2004

• Fabrication and optical measurement of micromachined airbridge in which quantum dots are embedded. We have controlled the PL emission energy of the dots by using the MEMS device. This type of structure enables deformation coupling between nanomechanical mode of airbridge and a QD.

• TOP

Journal publications

1. Toshiyuki Miyazawa, Toshihiro Nakaoka, Kazuya Takemoto, Shinnichi Hirose, Shigekazu Okumura, Motomu Takatsu, Tatsuya Usuki, Naoki Yokoyama, and Yasuhiko Arakawa, ‘Tunneling-Injection Single-Photon Emitter Using Charged Exciton State’, Japanese Journal of Applied Physics 48, 06FF01 (2009).
2. Toshiyuki Miyazawa, Toshihiro Nakaoka, Katsuyuki Watanabe, Naoto Kumagai, Naoki Yokoyama, and Yasuhiko Arakawa, ‘Anisotropic exciton Rabi oscillation in single telecommunication-band quantum dot’, Japanese Journal of Applied Physics (accepted).
3. T. Miyazawa, T. Nakaoka, K. Takemoto, S. Hirose, S. Okumura, M. Takatsu, T. Usuki, N. Yokoyama, Y. Arakawa, “Tunneling-Injection Single-Photon Emitter Using Charged Exciton State”, Jpn. J. Appl. Phys. 48, 06FF01 (2009).
4. T. Kodera, T. Ferrus, T. Nakaoka, G. Podd, M. Tanner, D. Williams, Y. Arakawa, “Fine and Large Coulomb Diamonds in a Silicon Quantum Dot”, J Jpn. J. Appl. Phys. 48, 06FF15 (2009).
5. T. Kodera, A. Suzuki, T. Miyazawa, H. Takagi, N. Kumagai, K. Watanabe, T. Nakaoka, Y. Arakawa, “Biexcitonic photocurrent induced by two-photon process at a telecommunication band”, physica status solidi (c) 6, 1445 - 1448 (2009).
6. H. Takagi, T. Nakaoka, K. Watanabe, N. Kumagai, and Y. Arakawa, "Coherently driven semiconductor quantum dot at a telecommunication wavelength", Optics Express 16, 13949 (2008).
7. T. Miyazawa, T. Nakaoka, T. Usuki, J. Tatebayashi, Y. Arakawa, S. Hirose, K. Takemoto, M. Takatsu, and N. Yokoyama, "Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3 μm", J. Appl. Phys. 104, 013504 (2008).
8. T. Miyazawa, T. Nakaoka, T. Usuki, Y. Arakawa, K. Takemoto, S. Hirose, S. Okumura, M. Takatsu, N. Yokoyama, "Exciton dynamics in current-injected single quantum dot at 1.55 μm", Appl. Phys. Lett. 92, 161104 (2008).
9. H. Takagi, T. Nakaoka, K. Watanabe, N. Kumagai, S. Iwamoto, and Y. Arakawa , "Observation of very narrow fine-structure splittings in self-assembled quantum dots by photocurrent spectroscopy", Physica E, 40, 2192 (2008).
10. T. Nakaoka, S. Tarucha and Y. Arakawa , "Electrical tuning of g-factor in single self-assembled quantum dots", Phys. Rev. B 76, 041301(R) (2007).
11. T. Nakaoka, S. Kako, S. Tarucha and Y. Arakawa , "Coulomb blockade in a self-assembled GaN quantum dot", Appl. Phys. Lett. 90, 162109 (2007).
12. T. Nakaoka, H. J. Krenner, E. C. Clark, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, and J. J. Finley, "Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule", Phys. Rev. B 74, 121305(R) (2006).
13. H. J. Krenner, E. C. Clark, T. Nakaoka, M. Bichler, C. Scheurer, G. Abstreiter, and J. J. Finley, "Measurement and Control of Spin and Charge Interactions in a Single Artificial Molecule", Phys. Rev. Lett. 97, 076403 (2006).
14. T. Nakaoka, S. Kako, and Y. Arakawa, "Unconventional Quantum Confined Stark Effect in GaN/AlN quantum dots.", Phys. Rev. B 73, 121305(R) (2006).
15. T. Nakaoka, S. Kako, and Y. Arakawa, "Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots", Physica E, 32, 148-151 (2006).
16. M. Nomura, S. Iwamoto, T. Nakaoka, S. Ishida, and Y. Arakawa, "Localized excitation of InGaAs quantum dots by utilizing a photonic crystal nanocavity", APPLIED PHYSICS LETTERS 88, 141108 (2006).
17. Masahiro Nomura, Satoshi Iwamoto, Toshihiro Nakaoka, Satomi Ishida and Yasuhiko Arakawa, "Cavity Resonant Excitation of InGaAs Quantum Dots in Photonic Crystal Nanocavities ", Japanese Journal of Applied Physics Vol. 45, No. 8A, 2006, pp. 6091-6095.
18. Toshiyuki Miyazawa, Jun Tatebayashi, Shinichi Hirose, Toshihiro Nakaoka, Satomi Ishida, Satoshi Iwamoto, Kazuya Takemoto, Tatsuya Usuki, Naoki Yokoyama, Motomu Takatsu and Yasuhiko Arakawa, "Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands ", Japanese Journal of Applied Physics Vol. 45, No. 4B, 2006, pp. 3621-3624.
19. T. Sato, T. Nakaoka, M. Kudo, and Y. Arakawa, "Magneto-optical single dot spectroscopy of GaSb/GaAs type II quantum dots", Physica E 32, 152-154 (2006).
20. D. Englund, D. Fattal, E. Waks, G. Solomon, B. Zhang, T. Nakaoka, Y. Arakawa, Y. Yamamoto, and J. Vuckovic, "Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal", Phys. Rev. Lett. 95, 013904 (2005).
21. T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, and Y. Arakawa, "Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering", Phys. Rev. B 71(20), 205301/1-205301/7 (2005).
22. M. Jung , T. Machida, K. Hirakawa, S. Komiyama, T. Nakaoka, S. Ishida, Y. Arakawa, "Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures", Appl. Phys. Lett. 87 (20), 203109 (2005).
23. S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida, Y. Arakawa, "Observation of 1.55 mu m light emission from InAs quantum dots in photonic crystal microcavity", Jpn. J. Appl. Phys., 44 (4B): 2579-2583 (2005).
24. M. Kudo, T. Nakaoka, S. Iwamoto, Y. Arakawa, "InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy", Jpn. J. Appl. Phys., 44 (1-7): L45-L47 (2005).
25. T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, Y. Arakawa, "Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding", Optics Express 13 (5): 1615-1620 (2005).
26. T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa, "Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm", Physica E: Low-Dimensional Systems & Nanostructures (Amsterdam, Netherlands) (2005), 26(1-4), 217-221.
27. T. Nakaoka, T.Saito, J.Tatebayashi, and Y. Arakawa, "Size, shape, and strain dependence of g-factor in self-assembled In(Ga)As quantum dots", Phys. Rev. B 70(23), 235337/1-235337/8 (2004).
28. T. Nakaoka, J. Tatebayashi, T.Saito and Y. Arakawa, "Carrier relaxation in closely stacked InAs quantum dots" J. Appl. Phys. 95, 150-154 (2004).
29. T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, "Manipulation of electronic states in single quantum dots by micromachined air-bridge." Appl. Phys. Lett. 84(8), 1392-1394. (2004).
30. T. Nakaoka, T. Kakitsuka, T. Saito, and Y. Arakawa, "Transition Energy Control via Strain in Single Quantum Dots "Jpn. J. Appl. Phys. 43, pp.2069-2072, (2004).
31. T. Nakaoka, T. Tatebayashi, and Y. Arakawa, "Spectroscopy on single columns of vertically aligned InAs quantum dots" Physica E 21(2-4), 409-413, (2004).
32. S.K. Park, J. Tatebayashi, T. Nakaoka, T. Sato, Y.J. Park, and Y. Arakawa, "Enhanced Optical Porperties of High-Density (>10¹¹/cm²) InAs/AlAs Quantum Dots by Hydrogen Passivation" Jpn. J. Appl. Phys. vol. 43, no. 4B, 2118-2121(2004)
33. Y. Toda, R. Morita, T. Nakaoka, M. Yamashita, T. Inoue, and Y. Arakawa "Selective excitation of self-assembled quantum dots by using shaped pulse", Physica E 21, 180 (2004)
34. M. Kudo, T. Mishima, S. Iwamoto, T. Nakaoka, Y. Arakawa, " Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates", Physica E 21(2-4),275-278　(2004).
35. T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, Y. Arakawa, " Lasing characteristics of InAs quantum-dot microdisk from 3 K to room temperature", Appl. Phys. Lett. (2004), 85(8), 1326-1328.
36. T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa: "Strain-induced modifications of the electronic states of InGaAs quantum dots" J. Appl. Phys. 94, 6812 (2003).
37. T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, and Y. Arakawa: "Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures." Phys. Stat. Solidi (2003), 238(2), 289-292.
38. T. Kakitsuka, T. Saito, T. Nakaoka, Y. Arakawa, H. Ebe, M. Sugawara, and Y. Yoshikuni, "Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers", Phys. Stat. Sol. (c) 0, No. 4, pp. 1157-1160 (2003).
39. Y. Wang, T. Nakaoka, K. Murase, “Structural relaxation and self-organization in network glasses at stiffness transition", J. of Non-Cryst. Solids 307-310, 772 (2002).
40. T. Nakaoka, S. Kako, S. Ishida, M. Nishioka, Y. Arakawa, "Optical anisotropy of self-assembled InGaAs quantum dots embedded in wall-shaped and air-bridge structures." Applied Physics Letters (2002), 81(21), 3954-3956.
41. T. Nakaoka, Y. Wang, K. Inoue, and K.Murase, "Trifurcated crystallization and inhomogeneity in GeSe2 glass", Phys. Rev. B 63, 224206/1-5 (2001),.
42. T. Nakaoka, Y. Wang, O. Matsuda, K. Inoue, and K. Murase, "Resonant Raman scattering in crystalline GeSe2" Phys. Rev. B 61, 15569-15572 (2000).
43. T. Nakaoka, Y. Wang, O. Matsuda, K.I noue, and K. Murase "Relaxation process of band edge exciton in layered crystalline GeSe2" J. Luminescence, 87-89, 617-619 (2000).
44. Y. Wang, T. Komamine, T. Nakaoka, O. Matsuda, K. Inoue, and K. Murase, " Effect of thermal annealing on dynamics of photoluminescence in a-GeSe2 films", J. Non-Cryst. Solids, 266-269, 904-907 (2000).

Conference publications

1. Toshiyuki Miyazawa, Toshihiro Nakaoka, Tetsuo Kodera, Hiroyuki Takagi, Naoto Kumagai, Katsuyuki Watanabe, and Yasuhiko Arakawa, ‘Acoustic Phonon Effects on Telecommunication Band Exciton Rabi Oscillation’, 36 th International Symposium on Compound Semiconductors (ISCS 2009), 19.4, University of California Santa Barbara, USA, (2009).
2. Toshiyuki Miyazawa, Toshihiro Nakaoka, Katsuyuki Watanabe, Naoto Kumagai, and Yasuhiko Arakawa, ‘Anisotropic Exciton Rabi Oscillations in Telecommunication Band Quantum Dot’, 22 nd International Microprocesses and Nanotechnology Conference (MNC 2009), 18D-7-88, Sheraton Sapporo Hotel, Sapporo, Japan, (2009).
3. Toshiyuki Miyazawa, Toshihiro Nakaoka, Tetsuo Kodera, Katsuyuki Watanabe, and Yasuhiko Arakawa, ‘Temperature Dependence of Excitonic Rabi Oscillation in Single Telecommunication-Band Quantum Dot’, International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN 2009), ThP-15, Univ. of Tokyo, Tokyo, Japan, (2009).
4. T. Nakaoka, K. Watanabe, N. Kumagai, Y. Arakawa, “Lateral single electron transport in capped self-assembled quantum dots”, The 14th International Conference on Modulated Semiconductor Structures (MSS14), M3e, Kobe, July 21 (2009).
5. A. Kirihara , J. Fujikata , T. Nakaoka , N. Kumagai , K. Watanabe , M. Shirane , S. Ohkouchi , S. Yorozu, Y. Arakawa, “High-transmission ridge nanoapertures for quantum dot devices”, MAR09 Meeting of the American Physical Society , March 17, 2009, J10.00006 (2009).
6. T. Miyazawa, T. Nakaoka, S. Okumura, S. Hirose, K. Takemoto, M. Takatsu, T. Usuki, N. Yokoyama and Y. Arakawa, “Sub-GHz Operation of Single-Photon Emitting Diode at 1.55 μm”, SPIE Photonic West'09, SanJose, USA (2009) (Invited Paper), Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, - Proceedings of SPIE Volume 7214, Paper 7214-29.
7. T. Miyazawa, T. Nakaoka, S. Okumura, S. Hirose, K. Takemoto, M. Takatsu, T. Usuki, N. Yokoyama and Y. Arakawa, "Tunneling-Injection Single-Photon Emitter using Charged Exciton State", 21st International Microprocesses and Nanotechnology Conference (MNC 2008), Fukuoka (2008),30B-10-3.
8. A. Suzuki,T. Kodera, T. Miyazawa, H. Takagi, N. Kumagai, K. Watanabe, T. Nakaoka, Y. Arakawa, "Dynamics of excitons in an InAs quantum dot at a telecom-band", Nano-Optoelectronics Workshop, 2008. i-NOW 2008, Date: 2-15 Aug. 2008, 10.1109/INOW.2008.4634522, Page(s): 231-232 (2008).
9. T. Kodera, A. Suzuki, T. Miyazawa, H. Takagi, N. Kumagai, K. Watanabe, T. Nakaoka and Y. Arakawa, “‘Biexiciton Rabi oscillation in a single quantum dot at a telecommunication band”,35 th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, (2008),Mo 2.3.
10. T. Miyazawa, T. Kodera, A. Suzuki, H. Takagi, N. Kumagai, K. Watanabe, T. Nakaoka, and Y. Arakawa, “Rabi oscillation and dynamics of excitonic states in a single quantum dot at a telecommunicationband", Nanotechnology Materials and Device Conference 2008 (NMDC 2008), Tokyo, Japan (2008), TuAI-4.
11. T. Nakaoka, H. Takagi, T. Kodera, N. Kumagai, K. Watanabe, and Y. Arakawa, “Observation of exciton Rabi oscillations at a telecommunication wavelength by photocurrent spectroscopy”, Tu3-O-02, the 5th International Conference on Semiconductor Quantum Dots (QD2008), Gyeongju, Korea (2008).
12. T. Nakaoka, K. Watanabe, N. Kumagai and Y. Arakawa, “Gate-Controlled Electron Tunneling, Photocurrent and Photoemission in Self-assembled Quantum Dots”, 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), TuC-2, Tokyo (2008).
13. T. Miyazawa, T. Nakaoka, K. Takemoto, M. Takatsu, T. Usuki, N. Yokoyama and Y. Arakawa, “Optical Properties and Electronic Structure of Telecommunication Bands InAs Quantum Dots on InP Substrate”, 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), ThA-6, Tokyo (2008).
14. A. Kirihara, S. Kono, T. Nakaoka, N. Kumagai, K. Watanabe, J. Fujikata, S. Ohkouchi, S. Yorozu and Y. Arakawa, “Magneto-optical Spectroscopy of Neutral, Positively-charged, and Negatively-charged Excitons in Single InAs/GaAs Quantum Dots”, 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), TuB-5, Tokyo (2008).
15. T. Kodera, H. Takagi, T. Nakaoka, N. Kumagai, K. Watanabe, S. Tarucha and Y. Arakawa, ” Temperature and Magnetic Field Dependence of Photocurrent Peaks at Wavelength of 1.3 μm”, 8th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN8), TuB-6, Tokyo (2008).
16. T. Nakaoka, S. Tarucha, Y. Arakawa, "Electrical tuning of g-factor in single self-assembled quantum dot", B12, Frontiers in Nanoscale Science and Technology, Tokyo (2007).
17. H. Takagi, T. Nakaoka, K. Watanabe, N. Kumagai, S. Iwamoto, and Y. Arakawa, "Spin Fine Structures of a Single Quantum Dot Studied by Photocurrent Spectroscopy", B7, Frontiers in Nanoscale Science and Technology, Tokyo (2007).
18. T. Nakaoka, H.J. Krenner, E. C. Clark, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, and J. J. Finley, “Direct Observation of Inter-level Phonon Relaxation in Individual Quantum Dot Molecule”, HL52.7, DPG spring meeting, Dresden, Germany (2006).
19. E. C. Clark, H.J. Krenner, T. Nakaoka, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, and J. J. Finley, “Observation of Multi-exciton Transitions in Individual Quantum Dot Molecules”, HL50.92, DPG spring meeting, Dresden, Germany (2006).
20. E. C. Clark, H.J. Krenner, T. Nakaoka, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, and J. J. Finley, "Charges and spins in nanostructures: basics and devices", 14th International Winter School on New Developments in Solid State Physics, Mauterndorf, Province of Salzburg, Austria. (2006).
21. E. C. Clark, H.J. Krenner, T. Nakaoka, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, and J. J. Finley, “Controlled Tunnel Hybridization Of Excitons In Individual Quantum Dot Molecules And Interlevel Phonon Relaxation”, The GDEST EU-US Workshop on Quantum Information and Coherence, Munich, Germany (2005).
22. T. Nakaoka, S. Kako, and Y. Arakawa, “Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots”, The 12th International Conference on Modulated Semiconductor Structures (MSS12), Albuquerque, New Mexico, USA (2005).
23. S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida and Y. Arakawa “1.55-micron light emission from self-assembled InAs QD in a high-Q photonic crystal microcavity”, Photonic West 2005, San Jose, USA, Proceedings of SPIE-The International Society for Optical Engineering 5733, 406 (2005).
24. T. Ide, T. Baba, J. Tatebayashi, T. Iwamoto, T. Nakaoka and Y. Arakawa, “Fabrication of InAs quantum-dot microdisk injection laser”, Int. Sympo. Quantum-Dot and Photonic Crystals, Tokyo, no. P-45 (2005).
25. T. Baba, T. Ide, S. Ishii, J. Tatebayashi, T. Iwamoto, T. Nakaoka and Y. Arakawa, “Quantum-dot lasing and photonic molecule behavior in microdisk lasers”, IEEE/LEOS Annual Meet., Sydney, no. ThZ1 (2005) (Invited Paper).
26. T. Baba, T. Ide, S. Ishii, A. Nakagawa, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Microdisk lasers: quantum dot lasing and bistability”, SPIE Photonic West "Novel In-Plane Semiconductor Lasers IV", San Jose, Proceedings of SPIE-The International Society for Optical Engineering 5738, 295 (2005) (Invited Paper).
27. T. Ide, T. Baba, J. Tatebayashi, T. Iwamoto, T. Nakaoka and Y. Arakawa, “InAs quantum dot microdisk laser at room temperature”, Conf. Laser and Electro-Optics, Trends in Optics and Photonics no. CThB3, San Francisco (2004)..
28. M. Kudo, T. Nakaoka, S. Iwamoto, Y. Arakawa, “Self-assembled InAsSb quantum dots grown on GaAs substrates by molecular-beam epitaxy”, International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 16th, Kagoshima, Japan, p.687 (2004).
29. S. Iwamoto, J. Tatebayashi T. Fukuda, T. Nakaoka, S. Ishida and Y. Arakawa “Observation of light emission at 1.5 ?m unifrom InAs quantum dots in photonic crystal microcavity", International Conference on Solid State Devices and Materials (2004) [備考：The SSDM Paper Award].
30. T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni and Y. Arakawa "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots with Dot Spacing 0-6 nm", Quantum Dots 2004 Conference, THP5, Banf, Canada (2004).
31. T. Nakaoka T. Saito, H. Z. Song, T. Usuki and Y. Arakawa “Characterization of g-factors in various In(Ga)As quantum dots” 27th International Conference on the Physics of Semiconductors,Q5.009、USA, AIP Conference Proceedings 772, 741 (2004).
32. T. Nakaoka .T. Kakitsuka. T. Saito and Y. Arakawa "Demonstration of MEMS Controlled Electronic States in Single Quantum dots", 2003 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan (2003).
33. T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa, "Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots", International Symposium on Quantum Dots and Photonic Crystals (QDPC2003), P-20, University of Tokyo, Tokyo, Japan (2003).
34. S. K. Park, J. Tatebayashi, T. Nakaoka, T. Sato, Y.J. Park, and Y. Arakawa, "Enhanced Optical Properties of High Density (>10¹¹/cm²) InAs/AlAs Quantum Dots by Using Hydrogen Passivation", 2003 International Conference on Solid State Devices and Materials (SSDM), 604, Tokyo, Japan, (2003).
35. T. Nakaoka, T. Kakitsuka T. Saito and Y. Arakawa, "MEMS manipulation of electronic states in single quantum dots", Frontiers of NanoscaleScience and Technology", University of Tokyo (2003).
36. T. Nakaoka, J. Tatebayashi and Y. Arakawa "Spectroscopy on single columns of vertically aligned InAs quantum dots", The 11th International Conference on Modulated Semiconductor Structures, Nara Japan (2002).
37. T. Nakaoka S. Kako, S. Ishida Y. Arakawa “Manipulation of strain effect on optical anisotropy in self-assembled InGaAs quantum dots” 26th International Conference on the Physics of Semiconductors (2002).
38. T. Nakaoka, T. Kakitsuka T. Saito S. Kako S. Ishida M. Nishioka Y. Yoshikuni and Y. Arakawa “Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures”, 2nd International Conference on Semiconductor Quantum Dots-QD2002 (2002).
39. T. Nakaoka, and Y. Arakawa, “Optical Properties of Quantum Dots Embedded in Micromachined Air Bridge Structures”, Japan-UK10+10 Meeting (2002).
40. T. Kakitsuka, T. Saito, T. Nakaoka, T. Arakawa, H. Ebe, M. Sugawara and Y. Yoshikuni, “Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers”, 2nd Int. Conf. On Semiconductor Quantum Dots (Tokyo, Japan2002).
41. Y. Toda, T. Matsubara, S. Kako, T. Nakaoka, M. Nishioka, S. Ishida, and Y. Arakawa, “A study of carrier-phonon interactions in single InGaAs self-assembled quantum dots”, Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba, Japan (2002).
42. T. Nakaoka, Y. Wang, O. Matsuda K. Inoue K. Murase, "Correlation of structural relaxation at glass transition with network connectivity in GexSe1-x glasses", 25th International Conference on the Physics of Semiconductors, Osaka, Springer Proceedings in Physics 87, 1687 (2001).
43. Y. Wang, T. Nakaoka, M. Nakamura, O. Matsuda, K. Murase, “Stiffness transition and connectivity in amorphous chalcogenide semiconductors”, 25th International Conference on the Physics of Semiconductors, Osaka, Springer Proceedings in Physics, 87, 228 (2001).
44. T. Nakaoka, Y. Wang, O. Matsuda, K. Inoue, and K. Murase, "Reversible photoinduced structural changes in GeSe2 glass at low temperature", 25th International Conference on the Physics of Semiconductors, Osaka, Springer Proceedings in Physics, 87, 113 (2001).

国内会議発表

以下に、国内会議発表のうち最新のもの及び主要な共同研究成果を中心に抜粋する。

1. 中岡俊裕，渡邊克之，熊谷直人，荒川泰彦, キャップ層を持つ静電結合2重 InAs量子ドットの単電子輸送特性. 2009年春季 第56回応用物理学関係連合講演会 31a-ZB-5 筑波大学(2009).
2. 桐原明宏，藤方潤一，中岡俊裕，熊谷直人，渡邉克之，白根昌之，大河内俊介，萬　伸一，荒川泰彦, 「高い透過率を有するリッジ型微小開口の作製と量子ドットデバイスへの応用」, 2009年春季 第56回応用物理学関係連合講演会 1p-H-3 筑波大学(2009).
3. 小寺哲夫，Thierry Ferrus，中岡俊裕，Michael Tanner，Gareth Podd，David Williams，荒川泰彦, 「シリコン量子ドットにおけるクーロンダイヤモンドの観測及び解析」2009年春季 第56回応用物理学関係連合講演会31a-ZB-6筑波大学(2009).
4. 宮川数正，斉藤敏夫，中岡俊裕，岩本　敏，荒川泰彦「歪み印加によるInAs/GaAs量子ドットの微細構造分裂の制御〜理論的検討〜」2009年春季 第56回応用物理学関係連合講演会31p-ZB-3筑波大学(2009).
5. 斎藤敏夫，中岡俊裕，荒川泰彦「InAs/GaAs量子ドットの励起子微細構造の磁場印加効果」2009年春季 第56回応用物理学関係連合講演会31p-ZB-22筑波大学(2009).
6. 中岡俊裕, 渡邉克之，熊谷直人, 荒川泰彦,「自己形成量子ドットを用いた単電子トランジスタ構造における光電流、発光の制御」、日本物理学会2008年秋季大会, 20aYK-12.
7. 中岡俊裕, 渡邉克之，熊谷直人,荒川泰彦,「キャップ層を有する自己形成InAs量子ドットの単電子伝導、発光、光電流特性」, 第55回（2008年春季）応用物理学会, 28p-E-2.
8. 桐原明宏，河野俊介, 中岡俊裕，熊谷直人，渡邉克之，藤方潤一，大河内俊介，萬伸一1,2，荒川泰彦,「電荷制御InAs/GaAs量子ドットにおける正および負の荷電励起子の磁気分光測定　第55回(2008年春季）応用物理学関係連合講演会, 28p-E-11 [備考：NECとの共同研究」.
9. 都木宏之, 中岡俊裕，渡邉克之，熊谷直人，岩本 敏，荒川泰彦,「1.3μm 通信波長帯における単一量子ドットの光電流分光測定〜コヒーレント制御を目指して〜」第23回（2007年秋季）応用物理学会, 6a-N-6 [備考：応用物理学会講演奨励賞].
10. Luigi Martiradonna，Luigi Carbone，Aniwat Tandaechanurat，北村雅季，野村政宏，西岡政雄，石田悟己，Benedetta Antonazzo，中岡俊裕，岩本　敏，Cingolani Roberto，荒川泰彦, 「コロイドナノ結晶を有するフォトニック結晶ナノ共振器の作製と光学評価」, 第68回（2007年秋季）応用物理学会学術講演会, 北海道工業大学 6p-P11-1　[備考：イタリアナノテクノロジー研究所との共同研究].
11. 野村政宏, 岩本敏, 中岡俊裕，石田悟己，荒川泰彦,「フォトニック結晶ナノ共振器を用いた量子ドットの選択励起」, 第20回（2006年春季）応用物理学会, 23p-L-13　[備考：応用物理学会奨励賞].
12. 工藤真, 中岡俊裕，岩本敏，荒川泰彦, 「 GaAs基板上InAs/GaSb積層量子ドットのMBE成長」, 第65回（2004年秋季）応用物理学会, 1p-P2-3, 263, 東北学院大学 [備考：日立製作所との共同研究].
13. 井上貴博，戸田泰則，中岡俊裕，館林潤, 石田悟己，荒川泰彦, 「過渡反射率測定によるInAs量子ドットのキャリア緩和に関する考察」, 第51回(2004年春季）応用物理学関係連合講演会, 28p-ZB-４[備考：北海道大学工学部との共同研究].
14. 太田剛, 大野圭司，M.Stopa，羽田野剛司，山田和正，樽茶清悟，中田義昭，宋　海智，宮澤俊之，大島利雄，横山直樹，中岡俊裕，荒川泰彦, 「一組の自己形成InAs結合量子ドットにおける殻構造の観測」, 第51回（2004年春季）応用物理学会, 29a-ZE-10　[備考：応用物理学会奨励賞, 富士通研, NTT物性研等との共同研究].
15. 井上貴博, 戸田泰則, 中岡俊裕, 石田悟己, 荒川泰彦, 「単一自己形成量子ドットにおける励起子-フォノン結合」, 第64回(2003年秋季）応用物理学会学術講演会, A-27[備考：北海道大学工学部との共同研究].

Patents

1. 【出願番号】 特願２００２−２８２４２６（Ｐ２００２−２８２４２６）
   【公開番号】 特開２００４−１１９７６８（Ｐ２００４−１１９７６８Ａ）
   【発明者】荒川泰彦、硴塚孝明、吉國裕三、斎藤敏夫、中岡俊裕、江部広治、菅原充
   【発明の名称】 半導体光素子、
   【出願人】 【識別番号】０００００４２２６
   【氏名又は名称】日本電信電話株式会社
   【識別番号】０００００５２２３
   【氏名又は名称】富士通株式会社
   【出願日】 平成１４年９月２７日（２００２．９．２７）
   
2. 【出願番号】 特願２００３−３３５２２７（Ｐ２００３−３３５２２７）
   【公開番号】 特開２００５−９９５８６（Ｐ２００５−９９５８６Ａ）
   【発明者】荒川泰彦、中岡俊裕、斎藤敏夫、硴塚孝明
   【発明の名称】半導体装置、
   【出願人】【識別番号】３９１０１２３２７
   【氏名又は名称】東京大学長
   【識別番号】０００００４２２６
   【氏名又は名称】日本電信電話株式会社
   【出願日】平成１５年９月２６日（２００３．９．２６）
   

Books

1. 「ナノフォトニックデバイスの基礎とその展開」（フォトニクスシリーズ）,第４章, コロナ社（印刷中）.
2. Y. Wang , T. Nakaoka K. Murase "Thermal relaxation and criticality of the stiffness transition", in Phase Transitions and Self-Organization in Electronic and Molecular Materials, edited by J. C. Phillips and M. F. Thorpe, Kluwercademic/ Plenum Publishers) (2001).